Impact of the interfacial layer on the low-frequency noise (1/f) behavior of MOSFETs with advanced gate stacks

@article{Crupi2006ImpactOT,
  title={Impact of the interfacial layer on the low-frequency noise (1/f) behavior of MOSFETs with advanced gate stacks},
  author={Felice Crupi and Purushothaman Srinivasan and Paolo Magnone and Eddy Simoen and Calogero Pace and Durga Misra and Cor Claeys},
  journal={IEEE Electron Device Letters},
  year={2006},
  volume={27},
  pages={688-691}
}
The impact of the interfacial layer thickness on the low-frequency (LF) noise (1/f noise) behavior of n- and p-channel MOSFETs with high-kappa gate dielectrics and metal gates is investigated. Decreasing the interfacial layer thickness from 0.8 to 0.4 nm affects the 1/f noise in two ways. 1) The mobility fluctuations mechanism becomes the main source of 1/f noise not only on pMOS devices, as usually observed, but also on nMOS devices. 2) A significant increase of the Hooge's parameter is… CONTINUE READING
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