Impact of the geometry on the noise properties of the 6H-SiC diodes

@inproceedings{Ouacha2000ImpactOT,
  title={Impact of the geometry on the noise properties of the 6H-SiC diodes},
  author={Hassan Ouacha and Magnus Willander and Aziz Ouacha and Qamar ul Wahab and Gillis Holm{\'e}n},
  year={2000}
}
The noise properties of 6H-SiC ion implanted p-n diodes have been investigated. The noise measurements were performed at room temperature under forward bias and frequency range from 10 to 100 KHz. The studied diodes have three different areas A1, A2, and A3, (with A1<A2<A3). The effect of the geometry on the noise properties of these junctions was found to be depending on the origin of the noise at low and high current densities. Two different noise behaviors have been observed, and two… CONTINUE READING

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