Impact of the Ga/In ratio on defects in Cu(In,Ga)Se2

The impact of the composition of a 3-stage- process deposited CIGS on the deep level spectrum was investigated using deep level transient and optical spectroscopies to probe defects throughout the bandgap to have a complete picture of the defect spectrum. It is shown that the defect spectra depend strongly on the Ga/In ratio with both higher numbers of trap… CONTINUE READING