Impact of surface roughness on silicon and germanium ultra-thin-body MOSFETs

Abstract

Ultra-thin body (UTB) SOI MOSFET is promising for sub-50 nm CMOS technologies (ITRS, 2003). However, recent experimental finding by Uchida (2002) suggests the need for serious reconsiderations of its long-term scaling capability into the sub-10 nm body thickness (T/sub BODY/) regime. Two new phenomena attributed to surface roughness (SR) are identified by… (More)

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