Impact of stoichiometry control in double junction memory on future scaling

Abstract

We propose a new discrete trap memory with double tunnel junction where we can control trapped electron density by stoichiometry control of charge store part. This memory has less than 3 nm EOT tunnel oxide, and can retain a high trapped electron number density 10/sup 12/ cm/sup -2/, which is critical one for future scaling, for 10 years after low field w/e… (More)

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