Impact of side reservoir on electromigration of copper interconnects


Side reservoir can improve electromigration (EM) lifetime of copper interconnects. In this work, finite element method (FEM) simulations for interconnect structures with cathode end-of-line reservoir and side reservoir respectively have been conducted to study the side reservoir effects on EM lifetime. It is demonstrated that side location is most likely to… (More)


6 Figures and Tables

Slides referencing similar topics