Impact of scattering on the performance of a Si GAA nanowire FETs: From diffusive to ballistic regime

Abstract

In this paper we study the effect of the phonon scattering in Silicon nanowire transistors using a Non equillibrium Green Function Formalism. We consider a wide range of channel lengths from 6 to 40 nm in 2.2&#x00D7;2.2 nm<sup>2</sup> cross section devices. We study the reduction in drain current due to scattering in these devices and extract the phonon-limited mobility. We also show the impact of the scattering in the channel and the source and drain regions and their contribution to the total current degradation, showing that for short gate length transistors most of the impact of the phonons comes from the source and drain regions.

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Cite this paper

@article{Aldegunde2010ImpactOS, title={Impact of scattering on the performance of a Si GAA nanowire FETs: From diffusive to ballistic regime}, author={Manuel Aldegunde and A. Martinez and A. Asenov}, journal={2010 14th International Workshop on Computational Electronics}, year={2010}, pages={1-4} }