Impact of scaling base thickness on the performance of heterojunction phototransistors.

Abstract

In this letter we report the effect of vertical scaling on the optical and electrical performance of mid-wavelength infrared heterojunction phototransistors based on type-II InAs/GaSb/AlSb superlattices. The performance of devices with different base thickness was compared as the base was scaled from 60 down to 40 nm. The overall optical performance shows… (More)
DOI: 10.1088/1361-6528/aa5849

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