Impact of minority-impurity scattering on the carrier mobility in compensated silicon

Abstract

In this paper, we review two different determinations of the minority impurity scattering in silicon. We show that an improper determination of minority impurity scattering can lead to potential errors in the modeling of carrier mobilities in compensated silicon. Early experimental results show that the effect of minority impurities may be underestimated in Klaassen’s commonly used model.

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Cite this paper

@inproceedings{Rougieux2012ImpactOM, title={Impact of minority-impurity scattering on the carrier mobility in compensated silicon}, author={F. E. Rougieux and M. de F. Forster and Daniel Harold Macdonald and Andr{\'e}s Cuevas}, year={2012} }