• Corpus ID: 249889198

Impact of interfaces on photoluminescence efficiency of high indium content InGaN quantum wells

  title={Impact of interfaces on photoluminescence efficiency of high indium content InGaN quantum wells},
  author={P. Wolny and Henryk Turski and Grzegorz Muzioł and Marta Sawicka and Julita Smalc-Koziorowska and J. Moneta and Anna Feduniewicz-Żmuda and Szymon Grzanka and Czesław Skierbiszewski},
InGaN-based light emitting diodes (LEDs) are known to suffer from low electron and hole wavefunction overlap due to high piezoelectric field. Staggered InGaN quantum wells (QWs) have been proposed to increase the wavefunction overlap and improve the efficiency of LEDs especially for long wavelength emitters. In this work we evidence that the growth of staggered QWs has also another beneficial effect as it allows to reduce the formation of defects, responsible for nonradiative Shockley-Read-Hall… 

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