Impact of fringing field on the C-V characterization of HfO2 high-κ dielectric MOS (p) capacitors fabricated through atomic layer deposition

@inproceedings{Maurya2013ImpactOF,
  title={Impact of fringing field on the C-V characterization of HfO2 high-κ dielectric MOS (p) capacitors fabricated through atomic layer deposition},
  author={Savita Maurya and Bhupendra Rakshpal Singh and Mithun Radhakrishna},
  year={2013}
}
MOS capacitors of high-κ gate insulator, HfO2 were fabricated by atomic layer deposition. The potential impact of fringing field on the performance of the device accounting for edge fringing effects (EFE) is studied through C-V characterization and reported in the paper. It is found that fringing fields have considerable impact on the performance of the device when dimensions are miniscule and going further down to accomodate more devices on smaller areas. Therefore, the issues accounting for… CONTINUE READING