Impact of drain electrode shape irregularities on breakdown voltage of AlGaN/GaN HEMTs

@article{Ohi2016ImpactOD,
  title={Impact of drain electrode shape irregularities on breakdown voltage of AlGaN/GaN HEMTs},
  author={Shintaro Ohi and Shinya Makino and Taisei Yamazaki and Hirokuni Tokuda and Joel Tacla Asubar and Masaaki Kuzuhara},
  journal={2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)},
  year={2016},
  pages={1-1}
}
In this work, we investigated the effect of shape irregularities of drain electrode on the breakdown voltage of AlGaN/GaN HEMTs. We found that some random devices having rough metal edge definition tend to have lower breakdown voltages. In addition, these devices showed localized high intensity luminescence observed under near pinch-off condition. This is likely due to electric field concentration near irregularities such as sharp edges and corners that were randomly formed at some point during… CONTINUE READING