Impact of boron penetration from S/D-extension on gate-oxide reliability for 65-nm node CMOS and beyond

Nitridation technique of the gate-oxide top surface has been much studied to suppress the boron penetration from the doped gate poly-silicon and proved to be efficient against NBTI degradation. However there is another path for boron to penetrate to gate-oxide from the substrate, where this technique is helpless. We found that boron penetration from the S/D… (More)