Impact of bilayer character on High K gate stack dielectrics breakdown obtained by conductive atomic force microscopy

@article{Foissac2013ImpactOB,
  title={Impact of bilayer character on High K gate stack dielectrics breakdown obtained by conductive atomic force microscopy},
  author={R. Foissac and S. Blonkowski and M. Kogelschatz and P. Delcroix and M. Gros-Jean and F. Bassani},
  journal={Microelectronics Reliability},
  year={2013},
  volume={53},
  pages={1857-1862}
}
0026-2714/$ see front matter 2013 Elsevier Ltd. All rights reserved. http://dx.doi.org/10.1016/j.microrel.2013.07.003 ⇑ Corresponding author at: Laboratoire des Technologies de la Microélectronique – CNRS/UJF-CEA-LETI/Minatec, 17 Rue des Martyrs 38054, Grenoble Cedex 9, France. Tel.: +33 438 780 397. E-mail address: romain.foissac@cea.fr (R. Foissac). R… CONTINUE READING