Impact of Trench Dimensions on the Device Performance of GaN Vertical Trench MOSFETs

Abstract

In this letter, we have examined the impact of trench dimensions on the breakdown voltage and ON-resistance of trench MOSFETs fabricated on sapphire and bulk GaN substrates. Contrary to simulation studies, the breakdown voltage decreased with an increase in trench dimensions in devices fabricated on sapphire substrates. However, such breakdown voltage… (More)

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