Impact of Shear Strain and Quantum Confinement on $ \langle\hbox{110}\rangle$ Channel nMOSFET With High-Stress CESL

@article{Takashino2008ImpactOS,
  title={Impact of Shear Strain and Quantum Confinement on \$ \langle\hbox\{110\}\rangle\$ Channel nMOSFET With High-Stress CESL},
  author={H. Takashino and Takeshi Okagaki and Takanori Uchida and Toshimitsu Hayashi and Motoaki Tanizawa and Eiji Tsukuda and Katsumi Eikyu and S. Wakahara and Kiyoshi Ishikawa and Osamu Tsuchiya and Yoshio Inoue},
  journal={IEEE Transactions on Electron Devices},
  year={2008},
  volume={55},
  pages={2632-2640}
}
In this paper, we propose a new analytical electron mobility model in strained Si inversion layers suitable for implementation in a drift-diffusion simulator. Using our new model, a numerical study in conjunction with comprehensive bending experiments has demonstrated that (100)-Si has the optimum channel direction along <110> in terms of the device performance of strained 65-nm-node nMOSFETs with contact etch stop layer and that both the shear-strain component and the quantum confinement… CONTINUE READING
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Strain effects on device characteristics: Implementation in drift-diffusion simulators

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