Impact of SEU configurations on a SRAM cell response at circuit level

@article{Micolau2011ImpactOS,
  title={Impact of SEU configurations on a SRAM cell response at circuit level},
  author={Gilles Micolau and Hassen Aziza and K. Castellani-Coulie and J-M. Portal},
  journal={2011 12th Latin American Test Workshop (LATW)},
  year={2011},
  pages={1-5}
}
This work focuses on the SEU simulation in a 90nm SRAM cell, in order to provide basic metrics for reliability studies. To do that, a charge generation model is used to simulate the impact of an ionizing particle striking a sensitive node. The current collected at this particular node is extracted and injected at a circuit level. Thus, a correlation between the circuit electrical behavior and the critical charge is presented. 

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References

Publications referenced by this paper.
Showing 1-10 of 13 references

SRAM dynamic stability: Theory, variability and analysis

2008 IEEE/ACM International Conference on Computer-Aided Design • 2008

Ion and electron trackstructure and its effects in silicon : model and calculation ”

J. Barak A. Akkerman, D. Emfietzoglou
Nuclear Instruments and Methods in Physics Research • 2005

Dynamic Noise Margin : definition and Model ” , Proceeding of the 17 th Inter

P. Mazumber L. Ding
Conf . on VLSI Design • 2004

Monte Carlo Simulations to Evaluate the Contribution of Si Bulk , Interconnects , and Packaging to AlphaSoft Error Rates in Advanced Technologies ”

F. Wrobel M. Gedion, F. Saigné, R. D. Schrimpf, J. Mekki
Flip - Chip Package Substrate Solder Issue • 2004

Determination on key parameters for SEU using full cell 3 - D SRAM simulations

J. M. Palau P. Roche, C. Tavernier, G. Bruguier, R. Ecoffet, J. Gasiot
IEEE Trans . Nucl . Sci . • 1999

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