• Corpus ID: 41181961

# Impact of Multi-Trap Assisted Tunneling on Gate Leakage of CMOS Memory Devices

@inproceedings{Entner2005ImpactOM,
title={Impact of Multi-Trap Assisted Tunneling on Gate Leakage of CMOS Memory Devices},
author={Robert Entner and Andreas Gehring and Hans Kosina and Tibor Grasser and Siegfried Selberherr and Christian Doppler},
year={2005}
}
• Published 8 May 2005
• Engineering
Dielectrics of state-of-the-art memory cells subject to repeated high fleld stress can have a high defect density. Thus, not only direct tunneling but also trap-assisted tunneling plays an important role. In this work a new approach for modeling gate leakage currents through highly degraded dielectrics is proposed. By rigorous simulation we show that multi-trap assisted tunneling becomes important for highly degrad dielectrics with thicknesses above approximately 4 nm, there it exceeds the…
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## References

SHOWING 1-9 OF 9 REFERENCES
Modeling of tunneling current and gate dielectric reliability for nonvolatile memory devices
• Physics
IEEE Transactions on Device and Materials Reliability
• 2004
We present a hierarchy of tunneling models suitable for the two- and three-dimensional simulation of logic and nonvolatile semiconductor memory devices. The crucial modeling topics are
Statistical simulation of leakage currents in MOS and flash memory devices with a new multiphonon trap-assisted tunneling model
A new physics-based model of leakage current suitable for MOS and Flash memory gate oxide is presented in this paper. This model, which assumes the multiphonon trap-assisted tunneling as conduction
Mechanism of stress-induced leakage current in MOS capacitors
• Physics
• 1997
Stress-induced leakage current (SILC) is examined both below and above the voltage at which the preexisting Fowler-Nordheim tunneling current dominates. Based on these results, it is argued that SILC
Field and high‐temperature dependence of the long term charge loss in erasable programmable read only memories: Measurements and modeling
• Physics
• 1995
High‐temperature charge transport across an oxide‐nitride‐oxide sandwich of erasable programmable read only memories is mainly governed by the oxide conductivity as experimentally determined. It was
Simulation of stress-induced leakage current in silicon dioxides: A modified trap-assisted tunneling model considering Gaussian-distributed traps and electron energy loss
• Engineering
• 2001
In this article, a modified generalized trap-assisted tunneling model (GTAT) is proposed to explain the excessive currents occurring at low electric fields during stressing (stress-induced leakage
Physical description of anomalous charge loss in floating gate based NVM's and identification of its dominant parameter
• Physics
2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320)
• 2002
A model for anomalous charge loss is presented based on the physical description of charge transport through the tunnel oxide. This physics based model considers phonon-assistance as well as
Physical model for trap-assisted inelastic tunneling in metal-oxide-semiconductor structures
• Physics, Engineering
• 2001
A physical model for trap-assisted inelastic tunnel current through potential barriers in semiconductor structures has been developed. The model is based on the theory of multiphonon transitions
Quantum two-dimensional calculation of time constants of random telegraph signals in metal-oxide-semiconductor structures
• Physics
• 1997
The thermal and gate-voltage dependencies for the capture and emission times of random telegraph signals have been theoretically analyzed in a Si-SiO2 interface. A quasi-two-dimensional treatment of