• Corpus ID: 41181961

Impact of Multi-Trap Assisted Tunneling on Gate Leakage of CMOS Memory Devices

  title={Impact of Multi-Trap Assisted Tunneling on Gate Leakage of CMOS Memory Devices},
  author={Robert Entner and Andreas Gehring and Hans Kosina and Tibor Grasser and Siegfried Selberherr and Christian Doppler},
Dielectrics of state-of-the-art memory cells subject to repeated high fleld stress can have a high defect density. Thus, not only direct tunneling but also trap-assisted tunneling plays an important role. In this work a new approach for modeling gate leakage currents through highly degraded dielectrics is proposed. By rigorous simulation we show that multi-trap assisted tunneling becomes important for highly degrad dielectrics with thicknesses above approximately 4 nm, there it exceeds the… 

Figures from this paper

A Charge-Trapping Model for the Fast Component of Positive Bias Temperature Instability (PBTI) in High- $\kappa $ Gate-Stacks
We propose a physical model for the fast component (<;1 s) of the positive bias temperature instability (PBTI) process in SiOx/HfO2 gate-stacks. The model is based on the electron- phonon interaction
Modeling and Simulation of Negative Bias Temperature Instability
An elaborate investigation of literature from the first report to the recent understanding of this degradation mechanism is presented and a comprehensive model is derived, combining research results from different groups and the coupling to the basic semiconductor device equations.
AVERT: An elaborate model for simulating variable retention time in DRAMs
Low-Temperature, Chemically Grown Titanium Oxide Thin Films with a High Hole Tunneling Rate for Si Solar Cells
In this paper, we propose a chemically grown titanium oxide (TiO 2 ) on Si to form a heterojunction for photovoltaic devices. The chemically grown TiO 2 does not block hole transport. Ultraviolet
Nanotransfer Printing and Kinetic Monte Carlo Simulations of Metal-Oxide-Structures
In this work nanotransfer printing (nTP) was combined with plasma oxidation of Ti to an efficient fabrication process for ordered nano- and microscale metal- and metal-oxide-structures on doped
Developments for an embedded and reliable floating gate dosimeter
Los equipos electronicos se ven constantemente afectados por la radiacion del ambiente, a nivel del mar y mas severamente en entornos radiactivos a gran altitud, en el espacio o en aceleradores de
Design methodologies for scalable and reliable memory systems


Modeling of tunneling current and gate dielectric reliability for nonvolatile memory devices
We present a hierarchy of tunneling models suitable for the two- and three-dimensional simulation of logic and nonvolatile semiconductor memory devices. The crucial modeling topics are
Modeling of anomalous SILC in flash memories based on tunneling at multiple defects
Statistical simulation of leakage currents in MOS and flash memory devices with a new multiphonon trap-assisted tunneling model
A new physics-based model of leakage current suitable for MOS and Flash memory gate oxide is presented in this paper. This model, which assumes the multiphonon trap-assisted tunneling as conduction
Mechanism of stress-induced leakage current in MOS capacitors
Stress-induced leakage current (SILC) is examined both below and above the voltage at which the preexisting Fowler-Nordheim tunneling current dominates. Based on these results, it is argued that SILC
Field and high‐temperature dependence of the long term charge loss in erasable programmable read only memories: Measurements and modeling
High‐temperature charge transport across an oxide‐nitride‐oxide sandwich of erasable programmable read only memories is mainly governed by the oxide conductivity as experimentally determined. It was
Simulation of stress-induced leakage current in silicon dioxides: A modified trap-assisted tunneling model considering Gaussian-distributed traps and electron energy loss
In this article, a modified generalized trap-assisted tunneling model (GTAT) is proposed to explain the excessive currents occurring at low electric fields during stressing (stress-induced leakage
Physical description of anomalous charge loss in floating gate based NVM's and identification of its dominant parameter
A model for anomalous charge loss is presented based on the physical description of charge transport through the tunnel oxide. This physics based model considers phonon-assistance as well as
Physical model for trap-assisted inelastic tunneling in metal-oxide-semiconductor structures
A physical model for trap-assisted inelastic tunnel current through potential barriers in semiconductor structures has been developed. The model is based on the theory of multiphonon transitions
Quantum two-dimensional calculation of time constants of random telegraph signals in metal-oxide-semiconductor structures
The thermal and gate-voltage dependencies for the capture and emission times of random telegraph signals have been theoretically analyzed in a Si-SiO2 interface. A quasi-two-dimensional treatment of