Impact of MOSFET oxide breakdown on digital circuit operation and reliability

@article{Kaczer2000ImpactOM,
  title={Impact of MOSFET oxide breakdown on digital circuit operation and reliability},
  author={Ben Kaczer and Robin Degraeve and Guido Groeseneken and Mahmound Rasras and S. Kubicek and E. Vandamme and G. Badenes},
  journal={International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)},
  year={2000},
  pages={553-556}
}
We demonstrate that many gate oxide breakdowns can occur in parts of a digital circuit without affecting its overall logical function. This implies that if maintaining the circuit's logical functionality is the sufficient reliability criterion, the present reliability specifications are excessively stringent. 

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References

Publications referenced by this paper.
SHOWING 1-3 OF 3 REFERENCES

Gate oxide breakdown under Current Limited Constant Voltage Stress

  • 2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)
  • 2000

Gate oxide reliability projection to the s u b 2 nm

B. E. Weir er ul
  • stress," Symp. VLSI Techno[. Dig.. pp. 214-215,
  • 2000

Quantitative yield and reliability projection from antenna test results-a case study

  • 2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)
  • 2000