Impact of Interface Fixed Charges on the Performance of the Channel Material Engineered Cylindrical Nanowire MOSFET

Abstract

The paper presents a simulation study of effect of interface fixed charges on the performance of the cylindrical nanowire MOSFET for different channel materials (Si, GaAs and Ge). The objective of the present work is to study the effect of hot carrier damage/stress induced damage/process damage/radiation damage induced fixed charges at the semiconductor… (More)

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