Impact of Gd2O3 passivation layer on interfacial and electrical properties of atomic-layer-deposited ZrO2 gate dielectric on GaAs

@inproceedings{Gong2014ImpactOG,
  title={Impact of Gd2O3 passivation layer on interfacial and electrical properties of atomic-layer-deposited ZrO2 gate dielectric on GaAs},
  author={Youpin Gong and Haifa Zhai and Xiao-jie Liu and Jizhou Kong and Di Wu and Aidong Li},
  year={2014}
}
Abstract ZrO 2 gate dielectric films were fabricated on n-GaAs substrates by atomic layer deposition (ALD), using metal organic chemical vapor deposition (MOCVD)-derived ultrathin Gd 2 O 3 film as interfacial control layer between ZrO 2 and n-GaAs. The interfacial structure, capacitance–voltage and current–voltage properties of ZrO 2 /n-GaAs and ZrO 2 /Gd 2 O 3 /n-GaAs metal-oxide-semiconductor (MOS) capacitors have been investigated. The introduction of an ultrathin Gd 2 O 3 control layer can… CONTINUE READING

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