Impact of Elliptical Cross-Section on Some Electrical Properties of Gate-All-Around MOSFETs

@inproceedings{Jha2013ImpactOE,
  title={Impact of Elliptical Cross-Section on Some Electrical Properties of Gate-All-Around MOSFETs},
  author={Shankaranand Jha and Ashok Kumar and Subindu Kumar},
  year={2013}
}
-Silicon (Si) Gate-All-Around (GAA) MOSFETs offers full electrostatic control over the gate which makes them promising candidates for the next generation complimentary metal-oxide-semiconductor field-effect transistors (CMOS) devices. Due to variations in the growth condition, the cross-section of GAA MOSFETs is often elliptical instead of being perfectly circular. This elliptical cross section changes the effective diameter of the silicon core which in turn affects the electrical properties of… CONTINUE READING
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The effect of the geometry aspect ratio on the silicon ellipse-shaped surrounding-gate field-effect transistor and circuit

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