Impact of Duty Factor, Stress Stimuli, and Gate Drive Strength on Gate Delay Degradation with an Atomistic Trap-Based BTI Model

@article{Kukner2012ImpactOD,
  title={Impact of Duty Factor, Stress Stimuli, and Gate Drive Strength on Gate Delay Degradation with an Atomistic Trap-Based BTI Model},
  author={Halil Kukner and Pieter Weckx and Praveen Raghavan and Ben Kaczer and Francky Catthoor and Liesbet Van der Perre and Rudy Lauwereins and Guido Groeseneken},
  journal={2012 15th Euromicro Conference on Digital System Design},
  year={2012},
  pages={1-7}
}
With deeply scaled CMOS technology, Bias Temperature Instability (BTI) has become one of the most critical degradation mechanisms impacting the device reliability. In this paper, we present the BTI evaluation of a single inverter gate covering both the PMOS and NMOS degradations in a workload dependent, atomistic trap-based, stochastic BTI model. The gate propagation delay depends on the gate intrinsic delay, the input signal characteristics, and the output load. Thus, the BTI degradation is… CONTINUE READING

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