Impact of CF4 plasma treatment on threshold voltage and mobility in Al2O3/InAlN/GaN MOSHEMTs

@inproceedings{Hu2014ImpactOC,
  title={Impact of CF4 plasma treatment on threshold voltage and mobility in Al2O3/InAlN/GaN MOSHEMTs},
  author={Zongyang Hu and Yuanzheng Yue and Mingda Zhu and Bo Song and Satyaki Ganguly and Josh Bergman and Debdeep Jena and Huili Grace Xing},
  year={2014}
}
The shift of the threshold voltage Vth in Al2O3/InAlN/GaN metal–oxide–semiconductor high-electron-mobility transistors (MOSHEMTs) is demonstrated by CF4 plasma treatments. The accompanying channel mobility degradation is monitored to understand the tradeoff design space. The effective negative charge introduced by the F plasma treatments at the oxide interface is found to be as high as −0.73 × 1013 cm−2 (mobility > 500 cm2 V−1 s−1), sufficient to fully compensate for the net polarization charge… CONTINUE READING

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