Impact ionization MOS (I-MOS)-Part II: experimental results

  title={Impact ionization MOS (I-MOS)-Part II: experimental results},
  author={K. Gopalakrishnan and Raymond W. Woo and Christoph Jungemann and P B Griffin and J. D. Plummer},
  journal={IEEE Transactions on Electron Devices},
Part I of this paper dealt with the fundamental understanding of device physics and circuit design in a novel transistor, based on the field-effect control of impact-ionization (I-MOS). This paper focuses on experimental results obtained on various silicon-based prototypes of the I-MOS. The fabricated p-channel I-MOS devices showed extremely abrupt transitions from the OFF state to the ON state with a subthreshold slope of less than 10 mV/dec at 300 K. These first experimental prototypes of the… CONTINUE READING
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Publications referenced by this paper.
Showing 1-10 of 26 references

Activation and diffusion studies of ion-implanted p and n dopants in germanium,

  • C. O. Chui, K. Gopalakrishnan, P. B. Griffin, J. D. Plummer, K. C. Saraswat
  • Appl. Phys. Lett., vol. 83,
  • 2003
3 Excerpts

CHISEL flash EEPROM. I. performance and scaling,

  • S. Mahapatra, S. Shukuri, J. Bude
  • IEEE Trans. Electron Devices,
  • 2002
1 Excerpt

and J

  • K. Gopalakrishnan, P. B. Griffin
  • D. Plummer, “I-MOS: A novel semiconductor device…
  • 2002
4 Excerpts

and H

  • C. Jungemann, S. Yamaguchi
  • Goto, “Is there experimental evidence for a…
  • 1996

face impact ionization in silicon devices

  • J. W. Slotboom, G. Streutker, G. J. T. Davis, P. B. Hartog
  • IEDM Tech . Dig .
  • 1996

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