Impact ionization MOS (I-MOS)-Part II: experimental results

@article{Gopalakrishnan2005ImpactIM,
  title={Impact ionization MOS (I-MOS)-Part II: experimental results},
  author={K. Gopalakrishnan and Raymond W. Woo and Christoph Jungemann and P B Griffin and J. D. Plummer},
  journal={IEEE Transactions on Electron Devices},
  year={2005},
  volume={52},
  pages={77-84}
}
Part I of this paper dealt with the fundamental understanding of device physics and circuit design in a novel transistor, based on the field-effect control of impact-ionization (I-MOS). This paper focuses on experimental results obtained on various silicon-based prototypes of the I-MOS. The fabricated p-channel I-MOS devices showed extremely abrupt transitions from the OFF state to the ON state with a subthreshold slope of less than 10 mV/dec at 300 K. These first experimental prototypes of the… CONTINUE READING
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