Impact-Ionization and Noise Characteristics of Thin III – V Avalanche Photodiodes

@inproceedings{Saleh2001ImpactIonizationAN,
  title={Impact-Ionization and Noise Characteristics of Thin III – V Avalanche Photodiodes},
  author={Mohammad A. Saleh and Majeed M. Hayat and Paul Sotirelis and Archie L. Holmes and Joe C. Campbell and Bahaa E. A. Saleh and Malvin Carl Teich},
  year={2001}
}
It is, by now, well known that McIntyre’s localized carrier-multiplication theory cannot explain the suppression of excess noise factor observed in avalanche photodiodes (APDs) that make use of thin multiplication regions. We demonstrate that a carrier multiplication model that incorporates the effects of dead space, as developed earlier by Hayat et al.provides excellent agreement with the impact-ionization and noise characteristics of thin InP, In0 52Al0 48As, GaAs, and Al0 2Ga0 8As APDs, with… CONTINUE READING
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