Imaging dielectric properties of Si nanowire oxide with conductive atomic force microscopy complemented with femtosecond laser illumination.

Abstract

In most Si nanowire (NW) applications, Si oxide provides insulation or a medium of controlled electron tunneling. This work revealed both similarities and differences in the dielectric properties of NW oxide compared with that grown on wafers. The interface barrier to electron transit from the semiconductor to the dielectric and the threshold electric field… (More)
DOI: 10.1021/nl0807171

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