Identifying Interface States in AlInN/GaN Heterostructure by Photocurrent Method

@article{Huang2011IdentifyingIS,
  title={Identifying Interface States in AlInN/GaN Heterostructure by Photocurrent Method},
  author={Yong-mao Huang and D. J. Chen and He Lu and Renli Zhang and Y. D. Zheng and Liang Li and Xiao-Tong Dong and Z. H. Li and Chanyuan Chen and Tian-xing Chen},
  journal={IEEE Electron Device Letters},
  year={2011},
  volume={32},
  pages={1071-1073}
}
In order to assess the residual leakage current mechanisms in electronic devices based on AlInN/GaN heterostructures, defect states were investigated by photocurrent method based on a metal-semiconductor-metal structure device. As a result, a continuous distribution of defect levels from 56 to 110 meV below the conduction band of GaN was identified at the… CONTINUE READING