Identification of the atomic scale defects involved in radiation damage in HfO/sub 2/ based MOS devices

@article{Ryan2005IdentificationOT,
  title={Identification of the atomic scale defects involved in radiation damage in HfO/sub 2/ based MOS devices},
  author={J. T. Ryan and P. M. Lenahan and A. Y. Kang and J. F. Conley and Gennadi Bersuker and P. S. Lysaght},
  journal={IEEE Transactions on Nuclear Science},
  year={2005},
  volume={52},
  pages={2272-2275}
}
We have identified the structure of three atomic scale defects which almost certainly play important roles in radiation damage in hafnium oxide based metal oxide silicon technology. We find that electron trapping centers dominate the HfO/sub 2/ radiation response. We find two radiation induced trapped electron centers in the HfO/sub 2/: an O/sub 2//sup -/ coupled to a hafnium ion and an HfO/sub 2/ oxygen vacancy center which is likely both an electron trap and a hole trap. We find that, under… CONTINUE READING
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