Identification of atomic-like electronic states in indium arsenide nanocrystal quantum dots

  title={Identification of atomic-like electronic states in indium arsenide nanocrystal quantum dots},
  author={Uri Banin and Yun Wei Cao and David Katz and Oded Millo},
Semiconductor quantum dots, due to their small size, mark the transition between molecular and solid-state regimes, and are often described as ‘artificial atoms’ (ref 1−3). This analogy originates from the early work on quantum confinement effects in semiconductor nanocrystals, where the electronic wavefunctions are predicted to exhibit atomic-like symmetries, for example ‘s ’ and ‘p ’. Spectroscopic studies of quantum dots have demonstrated discrete energy level structures and narrow… 
Optical emission from a charge-tunable quantum ring
It is found that the emission energy changes abruptly whenever an electron is added to the artificial atom, and that the sizes of the jumps reveal a shell structure.
Atomically manufactured nickel–silicon quantum dots displaying robust resonant tunneling and negative differential resistance
Providing a spin-free host material in the development of quantum information technology has made silicon a very interesting and desirable material for qubit design. Much of the work and experimental
Hidden symmetries in the energy levels of excitonic ‘artificial atoms’
Artificial electronic structure is investigated by injecting optically a controlled number of electrons and holes into an isolated single quantum dot, which forms complexes that are artificial analogues of hydrogen, helium, lithium, beryllium, boron and carbon excitonic atoms.
Magneto-Tunneling Spectroscopy of Self-Assembled InAs Quantum Dots
Quantum dots (QDs) are artificial, nanometer-sized clusters that confine the motion of an electron in all three spatial dimensions [1]. They provide an ideal system for studying quantum physics in
Electronic and Optical Properties of Quantum Dots: A Tight-Binding Approach
In this thesis the electronic and optical properties of semiconductor quantum dots are investigated by means of tight-binding (TB) models combined with configuration interaction calculations. In the
Can scanning tunnelling spectroscopy measure the density of states of semiconductor quantum dots?
It is concluded that quantitative information on the energy levels and Coulomb interactions can be obtained if the physics of the tip/quantum dot/substrate double-barrier tunnel junction is well understood.
Single-electron tunneling and Coulomb blockade in carbon-based quantum dots
Single-electron tunneling (SET) and Coulomb blockade (CB) phenomena have been widely observed in nanoscaled electronics and have received intense attention around the world. In the past few years, we
Kondo resonance in a single-molecule transistor
The Kondo resonance can be tuned reversibly using the gate voltage to alter the charge and spin state of the molecule and persists at temperatures up to 30 K and when the energy separation between the molecular state and the Fermi level of the metal exceeds 100 meV.
Engineering the Electronic Structure and the Optical Properties of Semiconductor Quantum Dots
Publisher Summary The optical and electronic properties of zero-dimensional (OD) semiconductor heterostructures were intense investigation in the last few years. The interest for such nanostructures
Semiconductor nanocrystals and embedded quantum dots: Electronic and optical properties
A tight-binding model for semiconductor quantum dots (QD) consisting of a small gap semiconductor material A embedded within a larger gap material B is used to determine the bound, localized


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We directly show the evolution of the electronic structure of semiconductor quantum dots (QDs) with QD size in the strong confinement regime by employing low-temperature tunneling current–voltage
Exchange interaction in InAs nanocrystal quantum dots
Abstract The near band-gap level structure in high-quality colloidal InAs nanocrystal quantum dots within the very strong confinement regime is investigated. Size-selective photoluminescence
A single-electron transistor made from a cadmium selenide nanocrystal
The techniques of colloidal chemistry permit the routine creation of semiconductor nanocrystals, whose dimensions are much smaller than those that can be realized using lithographic techniques. The
Size-dependent electronic level structure of InAs nanocrystal quantum dots: Test of multiband effective mass theory
The size dependence of the electronic spectrum of InAs nanocrystals ranging in radius from 10–35 A has been studied by size-selective spectroscopy. An eight-band effective mass theory of the quantum
Spatially Resolved Visible Luminescence of Self-Assembled Semiconductor Quantum Dots
Cathodoluminescence was used to directly image the spatial distribution of the quantum dots by mapping their luminescence and to spectrally resolve very sharp peaks from small groups of dots, thus providing experimental verification for the discrete density of states in a zero-dimensional quantum structure.
Electron-electron and electron-hole interactions in small semiconductor crystallites : The size dependence of the lowest excited electronic state
  • L. Brus
  • Materials Science, Chemistry
  • 1984
We model, in an elementary way, the excited electronic states of semiconductor crystallites sufficiently small (∼ 50 A diam) that the electronic properties differ from those of bulk materials. In
Colloidal chemical synthesis and characterization of InAs nanocrystal quantum dots
InAs nanocrystal quantum dots have been prepared via colloidal chemical synthesis using the reaction of InCl3 and As[Si(CH3)3]3. Sizes ranging from 25 to 60 A in diameter are produced and isolated
Measurement of the size dependent hole spectrum in CdSe quantum dots.
An avoided crossing around the spin orbit energy in the hole spectra for ∼65 A dots is observed, indicating the importance of valence band complexities in the description of the excited states.
Room-temperature conductance spectroscopy of CdSe quantum dots using a modified scanning force microscope.
The conductance of isolated CdSe quantum dots (QD's) of \ensuremath{\sim}4 nm diameter, epitaxially electrodeposited on gold substrates, has been studied using a scanning force microscope with a
Absorption and intensity-dependent photoluminescence measurements on CdSe quantum dots: assignment of the first electronic transitions
CdSe is used as a prototype to show the implications of valence-band degeneracy for the optical properties of strongly quantum-confined nanocrystals. Absorption spectra and photoluminescence spectra