Identification of a silicon vacancy as an important defect in 4H SiC metal oxide semiconducting field effect transistor using spin dependent recombination

@inproceedings{Cochrane2012IdentificationOA,
  title={Identification of a silicon vacancy as an important defect in 4H SiC metal oxide semiconducting field effect transistor using spin dependent recombination},
  author={Corey J. Cochrane and Patrick M. Lenahan and Aivars J. Lelis},
  year={2012}
}
A spin dependent recombination (SDR) spectrum observed in a wide range of SiC metal oxide semiconducting field effect transistors (MOSFETs) has previously been only tentatively linked to a silicon vacancy or vacancy related defect. By resolving hyperfine interactions in SDR detected spectra with 13C nuclei, we provide an extremely strong argument identifying the SDR spectrum with a silicon vacancy. Since the silicon vacancy spectrum dominates the SDR response in a wide variety of SiC MOSFETs… CONTINUE READING

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