ISFETs in CMOS and Emergent Trends in Instrumentation: A Review

@article{Moser2016ISFETsIC,
  title={ISFETs in CMOS and Emergent Trends in Instrumentation: A Review},
  author={Nicolas Moser and Tor Sverre Lande and Christofer Toumazou and Pantelis Georgiou},
  journal={IEEE Sensors Journal},
  year={2016},
  volume={16},
  pages={6496-6514}
}
Over the past decade, ion-sensitive field-effect transistors (ISFETs) have played a major role in enabling the fabrication of fully integrated CMOS-based chemical sensing systems. This has allowed several new application areas, with the most promising being the fields of ion imaging and full genome sequencing. This paper reviews the new trends in front-end topologies toward the design of ISFET sensing arrays in CMOS for these new applications. More than a decade after the review of the ISFET by… CONTINUE READING
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