ION IMPLANTATION DAMAGE IN SILICON

@inproceedings{Mader1988IONID,
  title={ION IMPLANTATION DAMAGE IN SILICON},
  author={Siegfried R. Mader},
  year={1988}
}
This chapter describes aspects of ion implantation damage which are important for Si process technology. Primary damage consists of atomic displacements and amorphization of Si (except for B implantation). Annealing restores crystal Unity and induces electrical activation of implanted dopant ions. It can also cause the formation of residual defects with well defined crystallographic nature. During prolonged annealing, these defects change their sizes and configurations. Their role in device… CONTINUE READING

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