INVESTIGATION OF WAVELENGTH GaInNAs 1300-1550 nm STRAINED QUANTUM WELLS ON GaAs SUBSTRATES

Abstract

In this paper the band structures of GaxIn1-xNyAs1-y/GaAs strained quantum wells are investigated using 4x4 k.p Hamiltonian including the heavy hole, light hole and spin-orbit splitting bands. The III–V-nitride semiconductor alloys, GaxIn1-xNyAs1-y, operating at optical fibre telecommunications wavelengths around 1.3 μm, attract an increasing amount of… (More)

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