ILP-Based Co-Optimization of Cut Mask Layout , Dummy Fill and Timing for Sub-14 nm BEOL Technology

@inproceedings{Han2015ILPBasedCO,
  title={ILP-Based Co-Optimization of Cut Mask Layout , Dummy Fill and Timing for Sub-14 nm BEOL Technology},
  author={Kwangsoo Han and Andrew B. Kahng and Hyein Lee and Lutong Wang},
  year={2015}
}
Self-aligned multiple patterning (SAMP), due to its low overlay error, has emerged as the leading option for 1D gridded back-end-of-line (BEOL) in sub-14nm nodes. To form actual routing patterns from a uniform “sea of wires”, a cut mask is needed for line-end cutting or realization of space between routing segments. Constraints on cut shapes and minimum cut spacing result in end-of-line (EOL) extensions and non-functional (i.e. dummy fill) patterns; the resulting capacitance and timing changes… CONTINUE READING

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