III-nitride blue microdisplays

@article{Jiang2001IIInitrideBM,
  title={III-nitride blue microdisplays},
  author={Hongxing Jiang and S. X. Jin and Jing Li and J. Shakya and Jingyu Lin},
  journal={Applied Physics Letters},
  year={2001},
  volume={78},
  pages={1303-1305}
}
Prototype blue microdisplays have been fabricated from InGaN/GaN quantum wells. The device has a dimension of 0.5×0.5 mm2 and consists of 10×10 pixels 12 μm in diameter. Emission properties such as electroluminescence spectra, output power versus forward current (L–I) characteristic, viewing angle, and uniformity have been measured. Due to the unique properties of III-nitride wide-band-gap semiconductors, microdisplays fabricated from III nitrides can potentially provide unsurpassed performance… 

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References

SHOWING 1-6 OF 6 REFERENCES
GaN microdisk light emitting diodes
Microdisk light-emitting diodes (μ-LEDs) with diameter of about 12 μm have been fabricated from InGaN/GaN quantum wells. Photolithographic patterning and inductively coupled plasma dry etching have
InGaN/GaN quantum well interconnected microdisk light emitting diodes
Interconnected microdisk light-emitting diodes (μ-LEDs) have been fabricated from InGaN/GaN single quantum wells grown by low pressure metal organic chemical vapor deposition. These interconnected
Polarization-enhanced Mg doping of AlGaN/GaN superlattices
The hole-transport properties of Mg-doped AlGaN/GaN superlattices are carefully examined. Variable-temperature Hall-effect measurements indicate that the use of such superlattices enhances the
Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
In the past several years, research in each of the wide‐band‐gap semiconductors, SiC, GaN, and ZnSe, has led to major advances which now make them viable for device applications. The merits of each
The Blue Laser Diode: GaN based Light Emitters and Lasers
Physics of gallium nitrides and related compounds GaN growth p-Type GaN obtained by electron beam irradiation n-Type GaN p-Type GaN InGaN Zn and Si co-doped InGaN/AlGaN double-heterostructure blue
ENHANCED MG DOPING EFFICIENCY IN AL0.2GA0.8N/GAN SUPERLATTICES
High p-type conductivity of Mg-doped AlGaN/GaN superlattices is demonstrated. The measured hole concentration at room temperature is over 2.5×1018 cm−3, more than ten times that obtained in bulk