III-V tri-gate quantum well MOSFET: Quantum ballistic simulation study for 10 nm technology and beyond

@article{Datta2016IIIVTQ,
  title={III-V tri-gate quantum well MOSFET: Quantum ballistic simulation study for 10 nm technology and beyond},
  author={Kanak Datta and Quazi Deen Mohd Khosru},
  journal={Solid-state Electronics},
  year={2016},
  volume={118},
  pages={66-77}
}

Performance Analysis of Ultra-thin-Body, DoubleGate pMOSFETs at 5 nm Technology Node

  • Afshan KhaliqW. Yin
  • Physics, Engineering
    2020 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization (NEMO)
  • 2020
In this work, quantum ballistic transport study of a Si double-gate pMOSFET has been carried out in an ultra-thin structure. The simulation is performed by using non-equilibrium Green’s function

The Husimi function of a semiconfined harmonic oscillator model with a position-dependent effective mass

In this paper, the phase space representation for a semiconfined harmonic oscillator model with a position-dependent effective mass is constructed. We have found the Husimi distribution function for

Exact solution of the semiconfined harmonic oscillator model with a position-dependent effective mass in an external homogeneous field

We extend exactly solvable model of a one-dimensional non-relativistic canonical semiconfined quantum harmonic oscillator with a mass that varies with position to the case where an external

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