III-Nitride-Based Cyan Light-Emitting Diodes With GHz Bandwidth for High-Speed Visible Light Communication

Abstract

A large reduction (from 17 to 5 nm) is made in the thickness of the barrier layers in the multiple-quantum-well region of III-nitride-based cyan light-emitting diodes (LEDs) grown on patterned sapphire substrates. This is shown to lead to a simultaneous improvement in the modulation speed, differential quantum efficiency, and maximum output power of the… (More)

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Cite this paper

@article{Shi2016IIINitrideBasedCL, title={III-Nitride-Based Cyan Light-Emitting Diodes With GHz Bandwidth for High-Speed Visible Light Communication}, author={Jin-Wei Shi and Kai-Lun Chi and J. M. Wun and John E. Bowers and Ya-Hsuan Shih and Jinn-Kong Sheu}, journal={IEEE Electron Device Letters}, year={2016}, volume={37}, pages={894-897} }