III–V compound semiconductor transistors—from planar to nanowire structures

@article{Riel2014IIIVCS,
  title={III–V compound semiconductor transistors—from planar to nanowire structures},
  author={Heike E. Riel and Lars‐Erik Wernersson and Minghwei Hong and Jes{\'u}s A. del Alamo},
  journal={Mrs Bulletin},
  year={2014},
  volume={39},
  pages={668-677}
}
Conventional silicon transistor scaling is fast approaching its limits. An extension of the logic device roadmap to further improve future performance increases of integrated circuits is required to propel the electronics industry. Attention is turning to III-V compound semiconductors that are well positioned to replace silicon as the base material in logic switching devices. Their outstanding electron transport properties and the possibility to tune heterostructures provide tremendous… 

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