III–V compound semiconductor transistors—from planar to nanowire structures

  title={III–V compound semiconductor transistors—from planar to nanowire structures},
  author={Heike E. Riel and Lars‐Erik Wernersson and Minghwei Hong and Jes{\'u}s A. del Alamo},
  journal={Mrs Bulletin},
Conventional silicon transistor scaling is fast approaching its limits. An extension of the logic device roadmap to further improve future performance increases of integrated circuits is required to propel the electronics industry. Attention is turning to III-V compound semiconductors that are well positioned to replace silicon as the base material in logic switching devices. Their outstanding electron transport properties and the possibility to tune heterostructures provide tremendous… 

Figures from this paper

Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors

  • M. Fu
  • Materials Science
  • 2018
As the rapid development of the semiconductor industry, modern silicon-based integrated circuits (IC) technology has come to the 14 nm node, approaching the physical and technological limit of

The development of planar high-K/III-V p-channel MOSFETs for post-silicon CMOS

Conventional Si complementary-metal-oxide-semiconductor (CMOS) scaling is fast approaching its limits. The extension of the logic device roadmap for future enhancements in transistor performance

High-Performance III-V MOSFETs and Tunnel-FETs Integrated on Silicon

Silicon transistor scaling is approaching its end and a transition to novel materials and device concepts is more than ever essential. High-mobility compound semiconductors are considered promising

Selective-Area Growth of InAs Nanowires on Ge and Vertical Transistor Application.

This work proposed direct integration of perfectly vertically aligned InAs nanowires on Ge as a method for new alternative integrated circuits and demonstrated a high-performance InAsnanowire-vertical surrounding-gate transistor.

III–V Nanowire Transistors for Low-Power Logic Applications: A Review and Outlook

III-V semiconductors, especially InAs, have much higher electron mobilities than Si and have been considered as promising candidates for n-channel materials for post-Si low-power CMOS logic

Nanometer-Scale III-V MOSFETs

After 50 years of Moore's Law, Si CMOS, the mainstream logic technology, is on a course of diminishing returns. The use of new semiconductor channel materials with improved transport properties over

Vertical InAs Nanowire Devices and RF Circuits

Recent decades have seen an exponential increase in the functionality of electronic circuits, allowing for continuous innovation, which benefits society. This increase in functionality has been

Performance Limit of Ultrathin GaAs Transistors.

High-electron-mobility group III-V compounds have been regarded as a promising successor to silicon in next-generation field-effect transistors (FETs). Gallium arsenide (GaAs) is an outstanding

III-V Nanowire MOSFETs: RF-Properties and Applications

  • L. Wernersson
  • Engineering
    2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
  • 2020
The III-V nanowire MOSFETs are used to design D-band LNAs with competitive performance and show promise for integration of pMOSFets, TFETs, and RRAM elements opening a wide range of applications.



A III–V nanowire channel on silicon for high-performance vertical transistors

Surrounding-gate transistors using core–multishell nanowire channels with a six-sided, high-electron-mobility transistor structure greatly enhance the on-state current and transconductance while keeping good gate controllability.

Nanometre-scale electronics with III–V compound semiconductors

For 50 years the exponential rise in the power of electronics has been fuelled by an increase in the density of silicon complementary metal–oxide–semiconductor (CMOS) transistors and improvements to

Fundamentals of III-V Semiconductor MOSFETs

Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are

Tunnel field-effect transistors as energy-efficient electronic switches

Tunnels based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal–oxide–semiconductor transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.

Fabrication of vertical InAs-Si heterojunction tunnel field effect transistors

Gated p-i-n diodes operating as tunnel field effect transistors (TFETs) [1] are recently attracting much attention because of potential benefits over conventional MOSFETs. They are expected to have

Low-Voltage Tunnel Transistors for Beyond CMOS Logic

This review introduces and summarizes progress in the development of the tunnel field- effect transistors (TFETs) including its origin, current experimental and theoretical performance relative to the metal-oxide-semiconductor field-effect transistor (MOSFET), basic current-transport theory, design tradeoffs, and fundamental challenges.

Vertical III-V nanowire device integration on Si(100).

We report complementary metal-oxide-semiconductor (CMOS)-compatible integration of compound semiconductors on Si substrates. InAs and GaAs nanowires are selectively grown in vertical SiO2 nanotube

Gold-Free Ternary III–V Antimonide Nanowire Arrays on Silicon: Twin-Free down to the First Bilayer

It is proved unambiguously that these gold-free nanowires are entirely twin-free down to the first bilayer and reveal their three-dimensional composition evolution, paving the way for novel infrared devices integrated directly on the cost-effective Si platform.

Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

In the current generation of transistors, the transistor dimensions have shrunk to such an extent that the electrical characteristics of the device can be markedly degraded, making it unlikely that the exponential decrease in transistor size can continue.

InGaAs Metal Oxide Semiconductor Devices with Ga 2 O 3 (Gd 2 O 3 ) High-κ Dielectrics for Science and Technology beyond Si CMOS

An overview is given on scientific and device advances for InGaAs metal oxide semiconductor heterostructures and inversion channel metal oxide semiconductor field-effect transistors (MOSFETs), with