Hysteresis-free negative capacitance germanium CMOS FinFETs with Bi-directional Sub-60 mV/dec

@article{Chung2017HysteresisfreeNC,
  title={Hysteresis-free negative capacitance germanium CMOS FinFETs with Bi-directional Sub-60 mV/dec},
  author={Wonil Chung and Mengwei Si and Peide D. Ye},
  journal={2017 IEEE International Electron Devices Meeting (IEDM)},
  year={2017},
  pages={15.3.1-15.3.4}
}
In this paper, we report on the first hysteresis-free Ge CMOS FinFETs exhibiting sub-60 mV/dec subthreshold slope (SS) in both forward and reverse sweeps at room temperature. Minimum SS<inf>rev</inf> of 7 mV/dec and SSfor of 17 mV/dec with a large voltage hysteresis of −4.3 V are achieved on 10 nm Hf<inf>0.5</inf>Zr<inf>0.5</inf>O<inf>2</inf> (HZO) Ge… CONTINUE READING