Hydrogenic impurity in zinc-blende GaN/AlGaN quantum dot

Abstract

Within the framework of effective-mass approximation, we have calculated the binding energy of a hydrogenic donor impurity in a zinc-blende (ZB) GaN/AlGaN cylindrical quantum dot (QD) using a variational procedure. It is found that the donor binding energy is highly dependent on the impurity position and QD size. The donor binding energy Eb is largest when the impurity is located at the center of the QD. The donor binding energy is decreased when the QD height (radius) is increased. r 2007 Elsevier Ltd. All rights reserved. PACS: 73.21.La; 71.55. i

DOI: 10.1016/j.mejo.2007.06.003

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Cite this paper

@article{Xia2007HydrogenicII, title={Hydrogenic impurity in zinc-blende GaN/AlGaN quantum dot}, author={Congxin Xia and Fengchun Jiang and Shuyi Wei and Xu Zhao}, journal={Microelectronics Journal}, year={2007}, volume={38}, pages={663-666} }