Hydrogenated amorphous silicon-germanium PIN X-ray detector

@inproceedings{Liu2001HydrogenatedAS,
  title={Hydrogenated amorphous silicon-germanium PIN X-ray detector},
  author={Sheng-da Liu and Si-Chen Lee and M. Y. Chern},
  year={2001}
}
The hydrogenated amorphous silicon-germanium (a-Si/sub 1-x/Ge/sub x/:H) pin X-ray detector has been fabricated successfully. It is found by introducing germanium into the amorphous silicon film, the X-ray detection efficiency is almost twice improved. This is due to the fact that the energy gap of a-Si/sub 1-x/Ge/sub x/:H is smaller than that of a-Si:H.