Hybrid triple-junction solar cells by surface activate bonding of III–V double-junction-cell heterostructures to ion-implantation-based Si cells

@article{Shigekawa2014HybridTS,
  title={Hybrid triple-junction solar cells by surface activate bonding of III–V double-junction-cell heterostructures to ion-implantation-based Si cells},
  author={Naoteru Shigekawa and Li Jin Chai and Masashi Morimoto and Jianbo Liang and Ryusuke Onitsuka and Takaaki Agui and Hiroyuki Juso and Tatsuya Takamoto},
  journal={2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)},
  year={2014},
  pages={0534-0537}
}
A hybrid triple-junction cell was fabricated by surface activated bonding of a lattice-matched invertedly-grown InGaP/GaAs double-junction cell to an ion-implantation-based Si bottom cell. An n+-doped layer on the top of bottom cell due to the ion implantation worked as its emitter and bonding layer for the tunnel junction. The bonding interface was found… CONTINUE READING