Hybrid external-cavity lasers (ECL) using photonic wire bonds as coupling elements

@article{Xu2021HybridEL,
  title={Hybrid external-cavity lasers (ECL) using photonic wire bonds as coupling elements},
  author={Yilin Xu and Pascal Maier and Matthias Blaicher and Philipp-Immanuel Dietrich and Pablo Marin-Palomo and Wladislaw Hartmann and Yiyang Bao and Huanfa Peng and Muhammad Rodlin Billah and Stefan Singer and Ute Troppenz and Martin Moehrle and Sebastian Randel and Wolfgang Freude and Christian Koos},
  journal={Scientific Reports},
  year={2021},
  volume={11}
}
Combining semiconductor optical amplifiers (SOA) on direct-bandgap III–V substrates with low-loss silicon or silicon-nitride photonic integrated circuits (PIC) has been key to chip-scale external-cavity lasers (ECL) that offer wideband tunability along with small optical linewidths. However, fabrication of such devices still relies on technologically demanding monolithic integration of heterogeneous material systems or requires costly high-precision package-level assembly, often based on active… 
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References

SHOWING 1-10 OF 48 REFERENCES
Photonic Integrated Circuits Using Heterogeneous Integration on Silicon
TLDR
An overview of recent research in the area showing record device performance by using the best of both worlds: III–V for light generation and Si for guiding the light is given.
Heterogeneous III-V on silicon nitride amplifiers and lasers via microtransfer printing
The development of ultralow-loss silicon-nitride-based waveguide platforms has enabled the realization of integrated optical filters with unprecedented performance. Such passive circuits, when
Widely-tunable, narrow-linewidth III-V/silicon hybrid external-cavity laser for coherent communication.
TLDR
A III-V/silicon hybrid external cavity laser with a tuning range larger than 60 nm at the C-band on a silicon-on-insulator platform and the first experimental demonstration of a complete silicon photonic based coherent link is demonstrated.
Hybrid multi-chip assembly of optical communication engines by in situ 3D nano-lithography
TLDR
German researchers demonstrate optical communication engines that rely on photonic wire bonding for connecting arrays of silicon photonic modulators to InP lasers and single-mode fibres and form the basis for simplified assembly of advanced photonic multi-chip systems that combine the distinct advantages of different integration platforms.
High power and widely tunable Si hybrid external-cavity laser for power efficient Si photonics WDM links.
A highly efficient silicon (Si) hybrid external cavity laser with a wavelength tunable ring reflector is fabricated on a complementary metal-oxide semiconductor (CMOS)-compatible Si-on-insulator
III-V/Si Hybrid Laser Arrays Using Back End of the Line (BEOL) Integration
Creating arrays of efficient optical sources to enable dense integration of silicon photonic transceivers with silicon very large-scale integration circuits remains a challenge. We review
III-V-on-Si photonic integrated circuits realized using micro-transfer-printing
TLDR
A promising technology, micro-transfer-printing (μTP), is discussed, which can be realized in a massively parallel manner on a wafer without substantial modifications to the SiPh process flow, leading to a significant cost reduction of the resulting III-V-on-Si PICs.
Connecting Silicon Photonic Circuits to Multicore Fibers by Photonic Wire Bonding
Photonic wire bonding is demonstrated to enable highly efficient coupling between multicore fibers and planar silicon photonic circuits. The technique relies on in-situ fabrication of
Ring-Resonator Based Widely-Tunable Narrow-Linewidth Si/InP Integrated Lasers
This paper presents recent results on widely-tunable narrow-linewidth semiconductor lasers using a ring-resonator based mirror as the extended cavity. Two generations of lasers on the heterogeneous
Widely-Tunable Ring-Resonator Semiconductor Lasers
Chip-scale widely-tunable lasers are important for both communication and sensing applications. They have a number of advantages, such as size, weight, and cost compared to mechanically tuned
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