Hybrid Integrated Semiconductor Lasers with Silicon Nitride Feedback Circuits
@article{Boller2019HybridIS, title={Hybrid Integrated Semiconductor Lasers with Silicon Nitride Feedback Circuits}, author={Klaus J. Boller and Albert van Rees and Youwen Fan and Jesse Mak and Rob Lammerink and Cornelis Franken and Peter J. M. van der Slot and David A. I. Marpaung and Carsten Fallnich and J{\"o}rn Epping and Ruud M. Oldenbeuving and Dimitri Geskus and Ronald Dekker and Ilka Visscher and Robert Grootjans and Chris G. H. Roeloffzen and Marcel Hoekman and Edwin J. Klein and Arne Leinse and Ren{\'e} G. Heideman}, journal={Photonics}, year={2019} }
Hybrid integrated semiconductor laser sources offering extremely narrow spectral linewidth, as well as compatibility for embedding into integrated photonic circuits, are of high importance for a wide range of applications. We present an overview on our recently developed hybrid-integrated diode lasers with feedback from low-loss silicon nitride (Si 3 N 4 in SiO 2 ) circuits, to provide sub-100-Hz-level intrinsic linewidths, up to 120 nm spectral coverage around a 1.55 μ m wavelength, and an…
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References
SHOWING 1-10 OF 214 REFERENCES
Novel integration technique for silicon/III-V hybrid laser.
- PhysicsOptics express
- 2014
A novel fabrication technique and associated transition structure is proposed and demonstrated to realize integrated lasers without the constraints of other critical processing parameters such as the starting silicon layer thicknesses.
Ultra-narrow linewidth hybrid integrated semiconductor laser
- Physics
- 2019
We demonstrate a hybrid integrated and widely tunable diode laser with an intrinsic linewidth as narrow as 40 Hz, achieved with a single roundtrip through a low-loss feedback circuit that extends the…
Narrow-linewidth, tunable external cavity dual-band diode lasers through InP/GaAs-Si3N4 hybrid integration.
- PhysicsOptics express
- 2019
Hybridly integrated narrow-linewidth, tunable diode lasers in the InP/GaAs-Si3N4 platform have potential for use in a variety of novel applications such as integrated difference-frequency generation, quantum photonics, and nonlinear optics.
Linewidth narrowing via low-loss dielectric waveguide feedback circuits in hybrid integrated frequency comb lasers.
- PhysicsOptics express
- 2019
We present an integrated hybrid semiconductor-dielectric (InP-Si3N4) waveguide laser that generates frequency combs at a wavelength around 1.5 μm with a record-low intrinsic optical linewidth of 34…
290 Hz intrinsic linewidth from an integrated optical chip-based widely tunable InP-Si3N4 hybrid laser
- Physics2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)
- 2017
Widely tunable, narrow linewidth diode lasers have found a wide range of important applications, from terrestrial ones, such as fiber-optic communications [1] or optical sensing [2], to applications…
Hybrid III--V on Silicon Lasers for Photonic Integrated Circuits on Silicon
- PhysicsIEEE Journal of Selected Topics in Quantum Electronics
- 2014
This paper summarizes recent advances of integrated hybrid InP/SOI lasers and transmitters based on wafer bonding. At first the integration process of III-V materials on silicon is described. Then…
Widely Tunable Narrow-Linewidth Monolithically Integrated External-Cavity Semiconductor Lasers
- PhysicsIEEE Journal of Selected Topics in Quantum Electronics
- 2015
We theoretically analyze, design, and measure the performance of a semiconductor laser with a monolithically integrated external cavity. A ~4 cm long on-chip cavity is made possible by a low-loss…
Ring-Resonator Based Widely-Tunable Narrow-Linewidth Si/InP Integrated Lasers
- PhysicsIEEE Journal of Selected Topics in Quantum Electronics
- 2020
This paper presents recent results on widely-tunable narrow-linewidth semiconductor lasers using a ring-resonator based mirror as the extended cavity. Two generations of lasers on the heterogeneous…
Novel Widely Tunable Monolithically Integrated Laser Source
- PhysicsIEEE Photonics Journal
- 2015
We report a novel type of monolithically integrated tunable semiconductor laser. The tuning is achieved by three intracavity Mach-Zehnder interferometers, realized in passive waveguides and using…
High-power sub-kHz linewidth lasers fully integrated on silicon
- PhysicsOptica
- 2019
We demonstrate a fully integrated extended distributed Bragg reflector (DBR) laser with ∼1 kHz linewidth and over 37 mW output power, as well as a ring-assisted DBR laser with less than 500 Hz…