How 2D semiconductors could extend Moore’s law

  title={How 2D semiconductors could extend Moore’s law},
  author={Ming-Yang Li and Sheng-Kai Su and H.-S. Philip Wong and Lain‐Jong Li},
Incredibly thin transistors could deliver even more powerful computers if three research challenges can be solved, argue Ming-Yang Li and colleagues.Incredibly thin transistors could deliver even more powerful computers if three research challenges can be solved, argue Ming-Yang Li and colleagues. 

Native high-k oxides for 2D transistors

The two-dimensional semiconductor Bi2O2Se can be oxidized to create an atomically thin layer of Bi2SeO5 that can be used as the insulator in scaled field-effect transistors.

Carbon nanotube transistor technology for More-Moore scaling

  • Q. Cao
  • Engineering
    Nano Research
  • 2021
Scaling of silicon field-effect transistors has fueled the exponential development of microelectronics in the past 60 years, but is now close to its physical limits with the critical dimensions of

High-Performance Graphene/AlGaN/GaN Schottky Junctions for Hot Electron Transistors

The electronic properties of the graphene (Gr) Schottky junction with an Al0.22Ga0.78N/GaN heterostructure on silicon have been investigated, both by experiment and with use of ab initio DFT calcul...

A Symmetric Tunnel Field-Effect Transistor Based on MoS2/Black Phosphorus/MoS2 Nanolayered Heterostructures

The fast-developing information technology has imposed urgent need for effective solutions to overcome the increasing power density in further scaled electronic devices and systems. The tunnel fiel...

Research Toward Monolithic Three-Dimensional ICs

Internet of things and artificial intelligence demand further performance improvements in integrated circuit systems. One ongoing effort is to continue the transistor scaling with either new device

Energy-efficient transistors: suppressing the subthreshold swing below the physical limit.

This review analytically formulate the subthreshold swing (SS), summarizes the methods for reducing the SS, and proposes four new transistor concepts, including tunnelling field-effect transistor, negative capacitance field- effect transistor, impact ionization field- Effect transistor, and cold source field-Effect transistor.

Synthesis and Applications of Wide Bandgap 2D Layered Semiconductors Reaching the Green and Blue Wavelengths

Two-dimensional semiconductors with a layered structure are now among the most extensively studied materials. The unique structural form of 2D layered semiconductors provides several benefits over ...

Bilayer tungsten diselenide transistors with on-state currents exceeding 1.5 milliamperes per micrometre

Two-dimensional semiconductors such as layered transition metal dichalcogenides can offer superior immunity to short-channel effects compared with bulk semiconductors such as silicon. As a result,

Designed Growth of Large‐Size 2D Single Crystals

Four key aspects of controlled growth of various 2D single crystals are reviewed, i.e., nucleation control, growth promotion, surface engineering, and phase control, which are expected to be controllable at different periods during the growth.

Quantum Transport in Monolayer α‐CS Field‐Effect Transistors

2D puckered materials similar to black phosphorene (BP) have tunable electronic structures, high mobility, and anisotropy, and are expected to become possible candidate channels for post‐silicon



Synthesis of Large-Area InSe Monolayers by Chemical Vapor Deposition.

A synthesis of InSe atomic layers by vapor phase selenization of In2 O3 in a chemical vapor deposition (CVD) system, resulting in large-area monolayer flakes or thin films, is reported.

Producing air-stable monolayers of phosphorene and their defect engineering

A new highly controllable method for fabricating high quality, air-stable phosphorene films with a designated number of layers ranging from a few down to monolayer, which could lead to new electronic and optoelectronic devices, such as electrically tunable, broadband near infrared lighting devices operating at room temperature.

Misorientation-angle-dependent electrical transport across molybdenum disulfide grain boundaries

This work explores misorientation angle-dependent electrical transport at grain boundaries in monolayer MoS2 by correlating the atomic defect structures of measured devices analysed with transmission electron microscopy and first-principles calculations.