Hot-phonon effect on power dissipation in a biasedAlxGa1−xN∕AlN∕GaNchannel

@inproceedings{Ramonas2005HotphononEO,
  title={Hot-phonon effect on power dissipation in a biasedAlxGa1−xN∕AlN∕GaNchannel},
  author={Mindaugas Ramonas and Arvydas Matulionis and Juozapas Liberis and Leister F. Eastman and Xin Chen and Y.‐J. Sun},
  year={2005}
}
The Monte Carlo simulation of hot-electron energy dissipation is carried out for a biased $\mathrm{Al}\mathrm{Ga}\mathrm{N}∕\mathrm{Al}\mathrm{N}∕\mathrm{Ga}\mathrm{N}$ channel. The conduction band profile and electron wave functions are calculated through self-consistent solution of Poisson and Schr\"odinger equations. Nonelastic scattering of electrons on acoustic phonons and nonequilibrium longitudinal optical (LO) phonons is included. The nonequilibrium LO phonons are treated in terms of… CONTINUE READING

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