Hot-hole lasers in III–V semiconductors

@article{Kinsler2001HotholeLI,
  title={Hot-hole lasers in III–V semiconductors},
  author={Paul Kinsler and W. Th. Wenckebach},
  journal={Journal of Applied Physics},
  year={2001},
  volume={90},
  pages={1692-1697}
}
Following the success of p-Ge hot-hole lasers, there is potential for using other semiconductor materials, notably III–V materials such as GaAs and InSb. Previous analysis had suggested that a large effective mass ratio between the heavy and light holes is advantageous, which implies that InSb would make an excellent hot-hole laser. Using our Monte Carlo simulation of both GaAs and InSb hot-hole lasers in combination with a rate equation model, we see that previously accepted criteria used to… 
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