Hot-hole and Electron Effects in Dynamically Stressed n-MOSFETs

  title={Hot-hole and Electron Effects in Dynamically Stressed n-MOSFETs},
  author={Werner Weber and I. Borchert},
  journal={ESSDERC '89: 19th European Solid State Device Research Conference},
Dynamic hot-carrier stresses have been performed with frequency and stress time as parameters. The resulting data show a steeper time dependence than any single static stress. By frequency variations and combinations of static stresses it was found that no transient effects are responsible for it. The results can be explained qualitatively by the subsequent… CONTINUE READING

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