Hot-electron induced excess carriers in MOSFET's

Abstract

The existence of minority carriers in the substrate of n-channel MOSFET's operating in the saturation region is shown to be induced by turn-on of the source-substrate junction and photon generation. The two mechanisms are demonstrated experimentally and the photon-generation mechanism is further illustrated on a p-well CMOS wafer. Photon generation poses a… (More)

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3 Figures and Tables